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ON Semiconductort
High Voltage Power Transistors
DPAK For Surface Mount Applications
D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r, SWITCHMODE t power supply drivers and other switching applications.
MJD47 * MJD50 *
*ON Semiconductor Preferred Device
* Lead Formed for Surface Mount Applications in Plastic Sleeves (No * * * * *
Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular TIP47, and TIP50 250 and 400 V (Min) -- VCEO(sus) 1 A Rated Collector Current
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
III I I I I I IIIIIIIIIIIIIIIIIIIII III I I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III I I I II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I III IIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB MJD47 250 350 MJD50 400 500 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5 1 2 Collector Current -- Continuous Peak Base Current 0.6 Total Power Dissipation @ TC = 25_C Derate above 25_C PD PD 15 0.12 Watts W/_C Watts W/_C _C Total Power Dissipation* @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 1.56 0.0125 TJ, Tstg -65 to +150
CASE 369A-13
CASE 369-07
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
0.190 4.826
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC RJA TL
Max
Unit
Thermal Resistance, Junction to Case
8.33 80
Thermal Resistance, Junction to Ambient* Lead Temperature for Soldering Purpose
_C/W _C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) MJD47 (IC = 30 mAdc, IB = 0) MJD50 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50
0.063 1.6 inches mm
VCEO(sus) ICEO
250 400
-- --
Vdc
mAdc
-- --
0.2 0.2
*When surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%.
(continued)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
November, 2001 - Rev. 4
Publication Order Number: MJD47/D
0.243 6.172
0.118 3.0
Max
Unit
0.100 2.54
260
0.165 4.191
_C/W
MJD47 MJD50
PD, POWER DISSIPATION (WATTS)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS - continued (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS -- continued Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) ICES mAdc MJD47 MJD50 -- -- -- 0.1 0.1 1 IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc) hFE -- 30 10 -- -- 150 -- 1 Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Base-Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc) VCE(sat) VBE(on) Vdc Vdc 1.5 DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) fT 10 25 -- -- MHz -- hfe (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 0.5 0 5 0 TC APPROX +11 V Vin t2 TURN-OFF PULSE TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) VCC Vin 51 t1 t3 Cjd << Ceb t1 7 ns 10 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2% APPROX -9 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. -4 V
RC RB SCOPE
25
50
75
100
125
150
T, TEMPERATURE (C)
Figure 1. Power Derating
Figure 2. Switching Time Equivalent Circuit
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MJD47 MJD50
200 100 hFE , DC CURRENT GAIN 60 40 20 10 6 4 2 0.02 0.2 0.4 0.6 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMPS) 1 2 TJ = 150C 25C -55C 1.4 VCE = 10 V V, VOLTAGE (VOLTS) 1.2 1 0.8 0.6 0.4 0.2 0 0.02 VBE(sat) @ IC/IB = 5 V VBE(on) @ VCE = 4 V TJ = 25C VCE(sat) @ IC/IB = 5 V 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) 1 2
Figure 3. DC Current Gain
Figure 4. "On" Voltages
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
23 5 t, TIME (ms)
10
20
30
Figure 5. Thermal Response
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MJD47 MJD50
5 IC, COLLECTOR CURRENT (AMP) 2 1 0.5 0.2 0.1 TC 25C 1 ms dc 500 s 100 s
0.05 0.02
0.01 0.005 5
SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25C WIRE BOND LIMIT MJD47 CURVES APPLY BELOW MJD50 RATED VCEO 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 6. Active Region Safe Operating Area
1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 2 tr td TJ = 25C VCC = 200 V IC/IB = 5 t, TIME ( s) 5 2 1 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 2 tf ts
t, TIME ( s)
TJ = 25C VCC = 200 V IC/IB = 5
Figure 7. Turn-On Time
Figure 8. Turn-Off Time
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MJD47 MJD50
PACKAGE DIMENSIONS
DPAK CASE 369A-13 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 ---
-T- B V R
4
SEATING PLANE
C E
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005)
M
T
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MJD47 MJD50
PACKAGE DIMENSIONS
DPAK CASE 369-07 ISSUE M
SCALE 1:1 B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
A
1 2 3
S -T-
SEATING PLANE
K
F D G
3 PL M
J H 0.13 (0.005) T
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MJD47 MJD50
Notes
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MJD47 MJD50
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MJD47/D

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